US 12,322,747 B2
Light emitting diode device, method for manufacturing the same and a display including the same
Xinglong Li, Xiamen (CN); Chen-Ke Hsu, Xiamen (CN); Junpeng Shi, Xiamen (CN); and Weng-Tack Wong, Xiamen (CN)
Assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan (CN)
Filed by QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan (CN)
Filed on Feb. 11, 2022, as Appl. No. 17/669,743.
Application 17/669,743 is a continuation in part of application No. PCT/CN2020/098498, filed on Jun. 28, 2020.
Claims priority of application No. 201910738265.4 (CN), filed on Aug. 12, 2019.
Prior Publication US 2022/0165922 A1, May 26, 2022
Int. Cl. H01L 33/58 (2010.01); H01L 25/075 (2006.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/58 (2013.01) [H01L 25/0753 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0091 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) device, comprising:
at least three LED chips that are spaced apart from one another, each of said LED chips being configured to emit light having a respective one of wavelengths, said LED chips cooperating to have a light emitting region, each of said LED chips having a first surface, a second surface opposite to said first surface, and a lateral surface interconnecting said first surface and said second surface;
an encapsulation layer that covers said lateral surface of each of said LED chips and that fills gaps between said LED chips; and
a lens that is disposed on said first surface of each of said LED chips and that covers said light emitting region of said LED chips,
wherein said light emitting region of said LED chips has a diameter not greater than 1 mm, and wherein a contact surface between said lens and said encapsulation layer is in an ellipse shape which satisfies a ratio of A to B ranging from 0.4 to 0.9, A≥1.5D, and H>0.5 A,
where A represents a length of a minor axis of said ellipse shape, B represents a length of a major axis of said ellipse shape, D represents said diameter of said light emitting region of said LED chips, and H represents a height of said lens.