US 12,322,742 B2
Semiconductor structure and manufacturing method thereof
Hsiang-Tai Lu, Hsinchu County (TW); Shuo-Mao Chen, New Taipei (TW); Mill-Jer Wang, Hsinchu (TW); Feng-Cheng Hsu, New Taipei (TW); Chao-Hsiang Yang, Hsinchu (TW); Shin-Puu Jeng, Hsinchu (TW); Cheng-Yi Hong, Hsinchu (TW); Chih-Hsien Lin, Tai-Chung (TW); Dai-Jang Chen, New Taipei (TW); and Chen-Hua Lin, Yunlin County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Nov. 24, 2023, as Appl. No. 18/518,636.
Application 18/518,636 is a division of application No. 17/743,455, filed on May 13, 2022, granted, now 11,855,066.
Application 16/937,343 is a division of application No. 15/725,766, filed on Oct. 5, 2017, granted, now 10,741,537, issued on Aug. 11, 2020.
Application 17/743,455 is a continuation of application No. 16/937,343, filed on Jul. 23, 2020, granted, now 11,335,672, issued on May 17, 2022.
Claims priority of provisional application 62/447,633, filed on Jan. 18, 2017.
Prior Publication US 2024/0088124 A1, Mar. 14, 2024
Int. Cl. H01L 25/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/053 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01)
CPC H01L 25/50 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 22/20 (2013.01); H01L 22/32 (2013.01); H01L 23/3135 (2013.01); H01L 23/3185 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 22/14 (2013.01); H01L 23/053 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/5226 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 23/562 (2013.01); H01L 24/23 (2013.01); H01L 24/24 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/214 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06589 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3511 (2013.01); Y02P 80/30 (2015.11)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer;
a first conductive member disposed over the RDL and electrically connected with the conductive trace;
a second conductive member disposed over the RDL and electrically connected with the conductive trace;
a first die disposed over the RDL;
a second die disposed over the first die, the first conductive member and the second conductive member; and
a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace,
wherein the first conductive member is electrically isolated from the second die.