US 12,322,728 B2
Method of manufacturing die stack structure
Ching-Jung Yang, Taoyuan (TW); and Hsien-Wei Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 11, 2022, as Appl. No. 17/669,383.
Application 17/669,383 is a division of application No. 15/939,310, filed on Mar. 29, 2018, granted, now 11,251,157.
Claims priority of provisional application 62/580,422, filed on Nov. 1, 2017.
Prior Publication US 2022/0165711 A1, May 26, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 22/32 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 24/08 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5386 (2013.01); H01L 24/03 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/0812 (2013.01); H01L 2224/18 (2013.01); H01L 2224/273 (2013.01); H01L 2224/27614 (2013.01); H01L 2224/27616 (2013.01); H01L 2224/29016 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/83895 (2013.01); H01L 2224/83896 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/059 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19102 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a die stack structure, comprising:
forming a first bonding structure over a front side of a first die, comprising:
forming a first bonding dielectric material on a first test pad of the first die, and then performing a planarization process on the first bonding dielectric material to expose a first protrusion of the first test pad while a first concave portion and a first flat portion of the first test pad are covered by the first bonding dielectric material;
forming a first blocking layer over the first bonding dielectric material; and
forming a second bonding dielectric material and a first dummy metal layer over the first blocking layer, wherein the first dummy metal layer and the first test pad are electrically isolated from each other by the first blocking layer; and
forming a second bonding structure over a front side of a second die; and
bonding the first die and the second die through the first bonding structure and the second bonding structure.