US 12,322,725 B2
Semiconductor device and method of forming insulating layers around semiconductor die
Satyamoorthi Chinnusamy, San Jose, CA (US); Kevin Simpson, Colorado Springs, CO (US); and Mark C. Costello, Fillmore, CA (US)
Assigned to Semtech Corporation, Camarillo, CA (US)
Filed by Semtech Corporation, Camarillo, CA (US)
Filed on May 9, 2023, as Appl. No. 18/314,336.
Application 18/314,336 is a continuation of application No. 17/090,731, filed on Nov. 5, 2020, granted, now 11,699,678.
Application 17/090,731 is a continuation of application No. 16/174,660, filed on Oct. 30, 2018, granted, now 11,075,187, issued on Jul. 27, 2021.
Application 16/174,660 is a continuation of application No. 15/797,712, filed on Oct. 30, 2017, granted, now 10,153,248, issued on Dec. 11, 2018.
Application 15/797,712 is a continuation of application No. 15/055,264, filed on Feb. 26, 2016, granted, now 9,837,375, issued on Dec. 5, 2017.
Prior Publication US 2023/0275065 A1, Aug. 31, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 25/075 (2006.01)
CPC H01L 24/94 (2013.01) [H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 23/3114 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/96 (2013.01); H01L 21/568 (2013.01); H01L 23/3185 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/0331 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05561 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/94 (2013.01); H01L 2224/96 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor wafer including a semiconductor material extending continuously from a first surface of the semiconductor wafer to a second surface of the semiconductor wafer opposite the first surface, and further including a contact pad formed over the first surface of the semiconductor wafer;
a trench formed through the semiconductor wafer from the first surface to the second surface;
an insulating material disposed over the first surface of the semiconductor wafer and into the trench, wherein a first surface of the insulating material is coplanar to the contact pad and a second surface of the insulating material is coplanar to the second surface of the semiconductor wafer; and
an insulating layer formed over the second surface of the semiconductor wafer.
 
7. A semiconductor device, comprising:
a semiconductor wafer including a contact pad formed over a first surface of the semiconductor wafer;
a conductive layer formed over the contact pad, wherein a discrete portion of the conductive layer includes a footprint that is substantially identical to a footprint of the contact pad;
a trench formed through the semiconductor wafer; and
an insulating material disposed over the first surface of the semiconductor wafer and into the trench, wherein a first surface of the insulating material is coplanar to the contact pad and a second surface of the insulating material is coplanar to a second surface of the semiconductor wafer opposite the first surface, and wherein the discrete portion of the conductive layer extends above the insulating material opposite the semiconductor wafer.
 
13. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a semiconductor material extending continuously from a first surface of the semiconductor wafer to a second surface of the semiconductor wafer opposite the first surface, and further including a contact pad formed over the first surface of the semiconductor wafer;
forming a trench through the semiconductor wafer from the first surface to the second surface;
disposing an insulating material over the first surface of the semiconductor wafer and into the trench, wherein a first surface of the insulating material is coplanar to the contact pad and a second surface of the insulating material is coplanar to the second surface of the semiconductor wafer opposite the first surface;
forming an insulating layer over the semiconductor wafer opposite the contact pad; and
singulating the semiconductor wafer through the insulating material and insulating layer.
 
19. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a contact pad formed over a first surface of the semiconductor wafer;
forming a trench into the semiconductor wafer;
disposing an insulating material over the semiconductor wafer and into the trench, wherein a first surface of the insulating material is coplanar to the contact pad;
forming a conductive layer over the contact pad, wherein a discrete portion of the conductive layer includes a footprint that is substantially identical to a footprint of the contact pad, and wherein the discrete portion of the conductive layer extends above the insulating material opposite the semiconductor wafer;
backgrinding the semiconductor wafer to expose the insulating material in the trench, wherein the backgrinding makes a second surface of the insulating material coplanar to a second surface of the semiconductor wafer opposite the first surface; and
forming an insulating layer over the semiconductor wafer opposite the contact pad and directly physically contacting the insulating material in the trench.