US 12,322,724 B2
Bonding method for copper-copper metal with hydrazine hydrate
Wenhua Yang, Hefei (CN); Xin Huang, Hefei (CN); Chao Xie, Hefei (CN); and Zhixiang Huang, Hefei (CN)
Assigned to ANHUI UNIVERSITY, Hefei (CN)
Filed by ANHUI UNIVERSITY, Hefei (CN)
Filed on Mar. 27, 2023, as Appl. No. 18/126,541.
Claims priority of application No. 202211721856.9 (CN), filed on Dec. 30, 2022.
Prior Publication US 2024/0222314 A1, Jul. 4, 2024
Int. Cl. B23K 20/02 (2006.01); C04B 37/00 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/80 (2013.01) [B23K 20/023 (2013.01); C04B 37/006 (2013.01); C04B 2237/124 (2013.01); C04B 2237/52 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/80075 (2013.01); H01L 2224/80095 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80895 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A bonding method for a copper-copper metal, comprising the following steps:
providing copper-plated substrates;
subjecting copper-plated surfaces of clean copper-plated substrates to pretreatment with hydrazine hydrate under a protective atmosphere, to obtain copper-plated surfaces to be bonded, wherein the clean copper-plated substrates are kept at a temperature of 50° C. to 90° C. during the pretreatment; and
subjecting a plurality of the copper-plated substrates to be bonded to pressurized bonding at a temperature of 200° C. to 300° C. under the protective atmosphere,
wherein the copper-plated substrates are selected from the group consisting of copper-plated silicon and coper-plated silicon carbide.