US 12,322,716 B2
Heat dissipating features for laser drilling process
Chien-Hung Chen, Hsinchu (TW); Cheng-Pu Chiu, Hsinchu (TW); Chien-Chen Li, Hsinchu (TW); Chien-Li Kuo, Hsinchu (TW); Ting-Ting Kuo, Hsinchu (TW); Li-Hsien Huang, Zhubei (TW); Yao-Chun Chuang, Hsinchu (TW); and Jun He, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 27, 2022, as Appl. No. 17/826,519.
Claims priority of provisional application 63/269,130, filed on Mar. 10, 2022.
Prior Publication US 2023/0290747 A1, Sep. 14, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01)
CPC H01L 24/06 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/06519 (2013.01); H01L 2224/214 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first dielectric layer over a carrier;
forming a first metal layer over the first dielectric layer, the first metal layer including a dummy pad and an active pad;
forming a second dielectric layer over the first metal layer;
forming a second metal layer over the second dielectric layer, wherein the dummy pad of the first metal layer is physically coupled to the second metal layer;
forming a third dielectric layer over the second metal layer;
attaching a device die over the third dielectric layer;
laser drilling an opening in the first dielectric layer to expose the dummy pad; and
while laser drilling the opening, dispersing heat from the laser drilling to the second metal layer by a metal connection between the first metal layer and the second metal layer.