US 12,322,711 B2
Die seal ring structure
Chia-Chen Sun, Kaohsiung (TW); and En-Chiuan Liou, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 10, 2022, as Appl. No. 17/691,130.
Claims priority of application No. 202210128113.4 (CN), filed on Feb. 11, 2022.
Prior Publication US 2023/0260930 A1, Aug. 17, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 23/58 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 23/585 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a die region and a die seal ring region defined on a substrate, wherein the die seal ring region surrounds the die region, the die seal ring region comprises an inner die seal ring and an outer die seal ring and the outer die seal ring comprises a metal interconnect structure on the substrate, wherein the metal interconnect structure comprises:
an inter-metal dielectric (IMD) layer on the substrate;
a first metal interconnection in the IMD layer, wherein a first side of the first metal interconnection comprises a comb-shape portion facing away from the die region in a top view, a second side of the first metal interconnection comprises a linear line, a third side of the first metal interconnection comprises a linear line, a fourth side of the first metal interconnection comprises a linear line, the first side and the second side are extending along a same direction, the third side and the fourth side are extending along the same direction, the third side is directly connected to the first side and the second side, and the fourth side is directly connected to the first side and the second side;
a second metal interconnection on the first metal interconnection, wherein the second metal interconnection extends along the linear line of the second side in a top view; and
a third metal interconnection on the first metal interconnection, wherein the third metal interconnection extends along the linear line of the second side in a top view and both the second metal interconnection and the third metal interconnection overlap the first metal interconnection entirely.