US 12,322,709 B2
Semiconductor device and laser marking method
Kosuke Masuzawa, Kyoto (JP); and Hiroshi Yoshida, Toyama (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Appl. No. 18/567,317
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
PCT Filed Jul. 6, 2022, PCT No. PCT/JP2022/026880
§ 371(c)(1), (2) Date Dec. 5, 2023,
PCT Pub. No. WO2023/139813, PCT Pub. Date Jul. 27, 2023.
Claims priority of provisional application 63/300,787, filed on Jan. 19, 2022.
Prior Publication US 2024/0332205 A1, Oct. 3, 2024
Int. Cl. H01L 23/544 (2006.01); B23K 26/073 (2006.01); B23K 26/18 (2006.01); B23K 26/40 (2014.01); B23K 101/00 (2006.01); B23K 101/40 (2006.01); G09F 7/16 (2006.01)
CPC H01L 23/544 (2013.01) [B23K 26/073 (2013.01); B23K 26/18 (2013.01); B23K 26/40 (2013.01); G09F 7/165 (2013.01); B23K 2101/007 (2018.08); B23K 2101/40 (2018.08); H01L 2223/54406 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device comprising:
a semiconductor substrate; and
a metal layer that is disposed on the semiconductor substrate and is exposed to outside,
wherein one or more marks are provided on an exposed surface of the metal layer,
the one or more marks each include an outline portion defining an outline of the mark, and a central portion located inward of the outline portion,
a surface oxygen content of the metal layer in the outline portion is higher than a surface oxygen content of the metal layer in the central portion,
a main component of the metal layer is at least one of nickel, magnesium, aluminum, chrome, or copper,
the outline portion and the central portion are exposed, and
the metal layer has a thickness of at least 2 μm.