| CPC H01L 23/544 (2013.01) [H01L 21/304 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 29/0634 (2013.01); H01L 29/7813 (2013.01); H01L 2223/5446 (2013.01)] | 4 Claims |
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1. A semiconductor device comprising:
a semiconductor substrate having:
a first main surface in which a first region, a second region and a third region are defined, and,
a second main surface in which a first conductivity type region including a substrate of a first conductivity type is arranged;
a column structure formed in the semiconductor substrate, the column structure including a first column structure formed in the first region, a second column structure formed in the second region, and a third column structure formed in the third region; and
a back surface electrode formed on the second main surface of the semiconductor substrate,
wherein the column structure includes:
a plurality of buried insulators formed in the semiconductor substrate, each of the plurality of buried insulators being formed from the first main surface toward the second main surface;
a first impurity region of the first conductivity type formed in the semiconductor substrate and formed at least from a depth position, which is located at a distance from the first main surface, to the first conductivity type region; and
a second impurity region of a second conductivity type formed in the semiconductor substrate and formed at least from the depth position to the first conductivity type region, the second impurity region being in contact with each of the respective buried insulator and the first impurity region,
wherein, in the first column structure:
the plurality of buried insulators is formed in island shapes, respectively, at a distance from each other in a plan view;
the first impurity region is formed from a position shallower than the depth position to the first conductivity type region; and
a first resistor is formed of the first impurity region,
wherein, in the second column structure:
each of the plurality of buried insulators is formed so as to extend in strip in a first direction in the plan view;
the second impurity region is formed from the first main surface to the first conductivity type region and is in contact with the respective buried insulator extending in strip; and
a second resistor is formed of the second impurity region located between a one end portion of the respective buried insulator and an another end portion of the respective buried insulator extending in strip, and
wherein, in the third column structure:
a semiconductor element, through which a current is conducted between the first main surface and the second main surface, is formed in the semiconductor substrate.
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