US 12,322,707 B2
Large die wafer, large die and method of forming the same
Sheng Hu, Hubei (CN); Jun Zhou, Hubei (CN); Peng Sun, Hubei (CN); Qiong Zhan, Hubei (CN); Senhua Shi, Hubei (CN); and Hu Yang, Hubei (CN)
Assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD., Hubei (CN)
Filed by WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD., Hubei (CN)
Filed on Dec. 30, 2021, as Appl. No. 17/566,398.
Claims priority of application No. 202110654051.6 (CN), filed on Jun. 11, 2021.
Prior Publication US 2022/0399282 A1, Dec. 15, 2022
Int. Cl. H01L 23/544 (2006.01); G03F 7/00 (2006.01); H01L 21/68 (2006.01)
CPC H01L 23/544 (2013.01) [G03F 7/70633 (2013.01); H01L 21/682 (2013.01); G01N 2223/6116 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54466 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a large die, the method comprising:
providing a wafer comprising a plurality of large dies each having a size greater than a size of a maximum field of exposure of a stepper, each of the large dies comprising at least two die portions to be stitched together, each of the die portions comprising a main die region and dummy dicing margins surrounding the main die region, each of the die portions having a size that is smaller than or equal to the size of the maximum field of exposure of the stepper, the die portions each comprising a substrate, a dielectric layer on the substrate and a first metal layer embedded in the dielectric layer, the first metal layer comprising at least to-be-interconnected metal layers for interconnection of the die portions to be stitched together; and
forming a second metal layer comprising at least inter-die interconnecting metal layers crossing the dummy dicing margins between adjacent ones of the die portions and coming into electrical connection with the to-be-interconnected metal layers of the adjacent ones of the die portions;
wherein the first metal layer further comprises leading-out metal layers in the main die region, wherein the second metal layer further comprises intra-die metal layers in the main die region, and wherein in each die portion, the intra-die metal layers are electrically connected to the leading-out metal layers along a thickness direction of the die portion, and
wherein the first metal layer further comprises first mark metal layers, the to-be-interconnected metal layers, the leading-out metal layers and the first mark metal layers of the first metal layer are formed in a same process.
 
10. A large die wafer, comprising a plurality of large dies each having a size greater than a size of a maximum field of exposure of a stepper, each of the large dies comprising:
at least two die portions to be stitched together, each of the die portions comprising a main die region and dummy dicing margins surrounding the main die region, each of the die portions having a size that is smaller than or equal to the size of the maximum field of exposure of the stepper, the die portions each comprising a substrate, a dielectric layer on the substrate and a first metal layer embedded in the dielectric layer, the first metal layer comprising at least to-be-interconnected metal layers for interconnection of the die portions to be stitched together; and
a second metal layer comprising at least inter-die interconnecting metal layers crossing the dummy dicing margins between adjacent die portions and coming into electrical connection with the to-be-interconnected metal layers of the adjacent die portions;
wherein the first metal layer further comprises leading-out metal layers in the main die region, wherein the second metal layer further comprises intra-die metal layers in the main die region, and wherein in each die portion, the intra-die metal layers are electrically connected to the leading-out metal layers along a thickness direction of the die portion, and
wherein the first metal layer further comprises first mark metal layers, the to-be-interconnected metal layers, the leading-out metal layers and the first mark metal layers of the first metal layer are formed in a same metal layer.
 
14. A large die, having a size greater than a size of a maximum field of exposure of a stepper, the large die comprising:
at least two die portions to be stitched together, each of the die portions comprising a main die region and dummy dicing margins surrounding the main die region, each of the die portions having a size that is smaller than or equal to the size of the maximum field of exposure of the stepper, the die portions each comprising a substrate, a dielectric layer on the substrate and a first metal layer embedded in the dielectric layer, the first metal layer comprising at least to-be-interconnected metal layers for interconnection of the die portions to be stitched together; and
a second metal layer comprising at least inter-die interconnecting metal layers crossing the dummy dicing margins between adjacent die portions and coming into electrical connection with the to-be-interconnected metal layers of the adjacent die portions;
wherein the first metal layer further comprises leading-out metal layers in the main die region, wherein the second metal layer further comprises intra-die metal layers in the main die region, and wherein in each die portion, the intra-die metal layers are electrically connected to the leading-out metal layers along a thickness direction of the die portion, and
wherein the first metal layer further comprises first mark metal layers, the to-be-interconnected metal layers, the leading-out metal layers and the first mark metal layers of the first metal layer are formed in a same metal layer.