US 12,322,701 B2
Different scaling ratio in FEOL / MOL/ BEOL
Liang-Yao Lee, Taoyuan (TW); Tsung-Chieh Tsai, Chu-Bei (TW); Juing-Yi Wu, Hsinchu (TW); and Chun-Yi Lee, Beipu Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Oct. 14, 2021, as Appl. No. 17/501,371.
Application 17/501,371 is a continuation of application No. 16/432,078, filed on Jun. 5, 2019, granted, now 11,152,303.
Application 16/432,078 is a continuation of application No. 15/016,448, filed on Feb. 5, 2016, granted, now 10,325,849, issued on Jun. 18, 2019.
Application 15/016,448 is a continuation of application No. 14/082,487, filed on Nov. 18, 2013, granted, now 9,292,649, issued on Mar. 22, 2016.
Prior Publication US 2022/0068812 A1, Mar. 3, 2022
Int. Cl. G06F 30/30 (2020.01); G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 64/66 (2025.01)
CPC H01L 23/5283 (2013.01) [G06F 30/39 (2020.01); G06F 30/398 (2020.01); H01L 23/5226 (2013.01); H10D 64/661 (2025.01); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated chip, comprising:
a first gate contact arranged over a substrate and having a first topmost surface;
a second gate contact arranged over the substrate and having a second topmost surface;
a first via arranged on the first topmost surface, wherein a bottommost surface of the first via physically contacts a first part of the first topmost surface along an interface that is a non-zero distance over the substrate, and wherein the first topmost surface continuously extends in a first direction from directly below the first via to a second part of the first topmost surface that is laterally outside of the first via; and
a second via arranged on the second topmost surface, wherein a bottommost surface of the second via physically contacts a first part of the second topmost surface, and wherein the second topmost surface continuously extends in a second direction, which is opposite the first direction, from directly below the second via to a second part of the second topmost surface that is laterally outside of the second via.