US 12,322,691 B2
Package structure and method of manufacturing the same
Chuei-Tang Wang, Taichung (TW); Chun-Lin Lu, Hsinchu (TW); and Kai-Chiang Wu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 24, 2024, as Appl. No. 18/420,775.
Application 18/420,775 is a continuation of application No. 17/676,826, filed on Feb. 22, 2022, granted, now 11,908,787.
Application 17/676,826 is a continuation of application No. 16/513,730, filed on Jul. 17, 2019, granted, now 11,264,316, issued on Mar. 1, 2022.
Prior Publication US 2024/0170386 A1, May 23, 2024
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/66 (2006.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01); H01Q 9/16 (2006.01)
CPC H01L 23/49838 (2013.01) [H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/66 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01Q 1/2283 (2013.01); H01Q 9/0407 (2013.01); H01Q 9/16 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68372 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/83005 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a conductive feature structure;
a die, disposed over the conductive feature structure;
an adhesive layer, disposed below the die;
an insulator, disposed between the adhesive layer and a polymer layer of the conductive feature structure;
a through via, extending through the insulator to connect to the conductive feature structure; and
an encapsulant, disposed on the insulator and the conductive feature structure, laterally encapsulating the die and the through via, and between the through via and the insulator,
wherein the insulator comprises a coefficient of thermal expansion less than a coefficient of thermal expansion of the encapsulant.