US 12,322,680 B2
Semiconductor device having backside interconnect structure on through substrate via
Yung-Chi Lin, Su-Lin (TW); Hsin-Yu Chen, Taipei (TW); Ming-Tsu Chung, Hsinchu (TW); Hsiaoyun Lo, Hsinchu (TW); Hong-Ye Shih, New Taipei (TW); Chia-Yin Chen, Hsinchu (TW); Ku-Feng Yang, Baoshan Township (TW); Tsang-Jiuh Wu, Hsinchu (TW); and Wen-Chih Chiou, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,871.
Application 18/447,871 is a division of application No. 17/366,785, filed on Jul. 2, 2021, granted, now 11,823,979.
Application 16/570,777 is a division of application No. 15/269,753, filed on Sep. 19, 2016, granted, now 10,510,641, issued on Dec. 17, 2019.
Application 15/269,753 is a division of application No. 13/955,688, filed on Jul. 31, 2013, granted, now 9,449,898, issued on Sep. 20, 2016.
Application 17/366,785 is a continuation of application No. 16/570,777, filed on Sep. 13, 2019, granted, now 11,056,419, issued on Jul. 6, 2021.
Prior Publication US 2023/0386976 A1, Nov. 30, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/76841 (2013.01); H01L 21/76883 (2013.01); H01L 21/76898 (2013.01); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a through-substrate via extending from a first side to a second side of the semiconductor substrate opposite the first side, and comprising a curved surface adjacent to the second side of the semiconductor substrate;
an isolation structure formed on the second side of the semiconductor substrate without covering the curved surface of the through-substrate via;
a conductive layer comprising a first portion formed on the curved surface of the through substrate via and a second portion formed on the isolation structure; and
a passivation layer provided on the conductive layer, wherein the passivation layer comprises a concave portion on the first portion of the conductive layer.