| CPC H01L 23/481 (2013.01) [H01L 21/76898 (2013.01); H01L 23/49822 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/585 (2013.01); H01L 25/0657 (2013.01)] | 20 Claims |
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1. A die comprising:
a semiconductor substrate having a front side and an opposing backside;
a dielectric structure comprising a substrate oxide layer disposed directly on the front side of the semiconductor substrate and interlayer dielectric (ILD) layers disposed on the substrate oxide layer;
an interconnect structure disposed in the dielectric structure;
a through-silicon via (TSV) structure extending in a vertical direction from the backside of the semiconductor substrate through the front side of the semiconductor substrate, such that a first end of the TSV structure is disposed in the dielectric structure;
a diffusion barrier layer disposed between the TSV structure and the semiconductor substrate; and
a TSV barrier structure comprising:
a barrier line that contacts the first end of the TSV structure; and
a first seal ring disposed in the substrate oxide layer and surrounding the TSV structure in a lateral direction perpendicular to the vertical direction,
wherein the seal ring extends in the vertical direction from the barrier line into the substrate oxide layer, such that a portion of the substrate oxide layer is disposed between the TSV structure and the first seal ring in the lateral direction, and
wherein a portion of the substrate oxide layer is disposed between the diffusion barrier layer and the barrier line in the vertical direction.
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