US 12,322,677 B1
Fluid channel geometry optimizations to improve cooling efficiency
Ron Zhang, Sunnyvale, CA (US); Gaius Gillman Fountain, Jr., Youngsville, NC (US); Belgacem Haba, Saratoga, CA (US); Kyong-Mo Bang, Fremont, CA (US); Laura Wills Mirkarimi, Sunol, CA (US); and Suhail Jaan Sadiq, Dublin, CA (US)
Assigned to Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US)
Filed by Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US)
Filed on Jul. 25, 2024, as Appl. No. 18/784,639.
Claims priority of provisional application 63/575,071, filed on Apr. 5, 2024.
Claims priority of provisional application 63/550,798, filed on Feb. 7, 2024.
Int. Cl. H01L 23/46 (2006.01); H01L 23/00 (2006.01); H01L 23/053 (2006.01); H01L 23/24 (2006.01); H01L 25/065 (2023.01); H01L 21/48 (2006.01)
CPC H01L 23/46 (2013.01) [H01L 23/053 (2013.01); H01L 23/24 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0655 (2013.01); H01L 21/4803 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/80896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device package comprising:
an integrated cooling assembly comprising a semiconductor device and a cold plate attached to the semiconductor device, the cold plate comprises:
a perimeter sidewall;
a top portion;
a bottom portion, wherein the bottom portion of the cold plate is attached to the semiconductor device by direct dielectric bonds; and
a plurality of pairs of opposing cavity sidewalls, wherein:
the perimeter sidewall extends downwardly from the top portion to a backside of the semiconductor device to define a perimeter of the cold plate;
a first pair of opposing cavity sidewalls extends downwardly from the top portion towards the backside of the semiconductor device to define a first coolant channel therebetween;
a device-facing side of the first coolant channel is open to the backside of the semiconductor device;
the first coolant channel has a substantially triangular cross-section defined by the first pair of opposing cavity sidewalls and the device-facing side of the first coolant channel;
the first pair of opposing cavity sidewalls are joined together to define a first vertex of the substantially triangular cross-section, the first vertex being spaced from the backside of the semiconductor device,
the substantially triangular cross-section has a pair of device-adjacent vertices at the backside of the semiconductor device, the pair of device-adjacent vertices comprise a first device-adjacent vertex and a second device-adjacent vertex;
a distance between the first device-adjacent vertex and the second device-adjacent vertex along the backside of the semiconductor device defines a width W of the first coolant channel;
the pair of device-adjacent vertices of the first coolant channel are separated from an additional pair of device-adjacent vertices of an adjacent coolant channel by a spacing S; and
a ratio of W to S is substantially 1:1.