US 12,322,673 B2
3DIC with heat dissipation structure and warpage control
Kuo-Chiang Ting, Hsinchu (TW); Sung-Feng Yeh, Taipei (TW); Ta Hao Sung, Hsinchu (TW); and Jian-Wei Hong, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 18, 2023, as Appl. No. 18/543,819.
Claims priority of provisional application 63/607,804, filed on Dec. 8, 2023.
Claims priority of provisional application 63/520,710, filed on Aug. 21, 2023.
Prior Publication US 2025/0069985 A1, Feb. 27, 2025
Int. Cl. H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/3735 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 25/0652 (2013.01); H01L 2224/05006 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/29005 (2013.01); H01L 2224/29021 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/182 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a bottom die;
a top die over and bonding to the bottom die, wherein the top die comprises a semiconductor substrate having a first thermal conductivity;
a first gap-fill region encapsulating the top die, wherein the first gap-fill region comprises a first edge and a second edge opposing to the first edge;
a supporting substrate bonding to the top die, wherein the supporting substrate has a second thermal conductivity higher than the first thermal conductivity, and wherein the supporting substrate comprises a third edge vertically aligned to the first edge, and a fourth edge vertically aligned to the second edge;
a bond film between the supporting substrate and the top die; and
electrical connectors on a front side of the bottom die.