US 12,322,667 B2
Seal for microelectronic assembly
Rajesh Katkar, San Jose, CA (US); Liang Wang, Milpitas, CA (US); Cyprian Emeka Uzoh, San Jose, CA (US); Shaowu Huang, Sunnyvale, CA (US); Guilian Gao, San Jose, CA (US); and Ilyas Mohammed, Santa Clara, CA (US)
Assigned to ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Jun. 9, 2022, as Appl. No. 17/806,253.
Application 16/678,058 is a division of application No. 15/920,759, filed on Mar. 14, 2018, granted, now 10,508,030, issued on Dec. 17, 2019.
Application 17/806,253 is a continuation of application No. 16/678,058, filed on Nov. 8, 2019, granted, now 11,417,576.
Claims priority of provisional application 62/474,478, filed on Mar. 21, 2017.
Prior Publication US 2022/0415734 A1, Dec. 29, 2022
Int. Cl. H01L 23/10 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); H01L 23/02 (2006.01); H01L 23/04 (2006.01); H01L 23/053 (2006.01)
CPC H01L 23/10 (2013.01) [B81B 7/0032 (2013.01); B81B 7/0074 (2013.01); B81C 1/00261 (2013.01); B81C 1/00269 (2013.01); B81C 1/00333 (2013.01); H01L 23/02 (2013.01); H01L 23/04 (2013.01); H01L 23/053 (2013.01); B81C 2203/038 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A microelectronic assembly, comprising:
a first microelectronic component bonded at a first insulating surface to a second insulating surface of a second microelectronic component, the first insulating surface having a first conductive feature and the second insulating surface having a second conductive feature, the first insulating surface and the second insulating surface forming a bond joint where the first insulating surface and the second insulating surface make contact and the bond joint includes a dielectric-to-dielectric bond and a metal-to-metal bond; and
a continuous seal ring extending around a periphery of and at least to the bond joint, the continuous seal ring comprising a metallic material and sealing the bond joint between the first microelectronic component and the second microelectronic component.