US 12,322,646 B2
Passivation layers with rounded corners
Mingni Chang, Hsinchu (TW); and Hsuan-Ming Huang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 9, 2022, as Appl. No. 17/690,556.
Prior Publication US 2023/0290673 A1, Sep. 14, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76802 (2013.01) [H01L 21/31138 (2013.01); H01L 21/76843 (2013.01); H01L 23/5223 (2013.01); H01L 23/53238 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/11019 (2013.01); H01L 2924/35121 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first insulating layer on a substrate, wherein the substrate comprises a first conductive structure;
forming an opening in the first insulating layer to expose the first conductive structure;
forming a second conductive structure on the first insulating layer, wherein the second conductive structure is in contact with the first conductive structure through the opening;
removing a portion of the second conductive structure with a first etching condition to form a rounded sidewall in a bottom portion of the second conductive structure;
removing a portion of the first insulating layer with a second etching condition, different from the first etching condition, to form a rounded corner between a sidewall of the second conductive structure and a top surface of the first insulating layer; and
depositing a second insulating layer on the first insulating layer and the second conductive structure.