US 12,322,645 B2
Method for fabricating physically unclonable function device
Ping-Chia Shih, Tainan (TW); Che-Hao Kuo, Tainan (TW); Ssu-Yin Liu, Kaohsiung (TW); Ching-Hua Yeh, Tainan (TW); and I-Hsin Sung, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 7, 2022, as Appl. No. 17/687,692.
Claims priority of application No. 202210128114.9 (CN), filed on Feb. 11, 2022.
Prior Publication US 2023/0260827 A1, Aug. 17, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/3213 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/76224 (2013.01) [H01L 21/31144 (2013.01); H01L 21/31155 (2013.01); H01L 21/32139 (2013.01); H01L 23/573 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A method for fabricating a physically unclonable function (PUF) device, comprising:
defining a PUF array on a substrate, wherein the PUF array comprises a first cell region carrying normal function and a second cell region with defects; and
performing a process to form a defect on the second cell region, wherein the process comprises:
forming a shallow trench isolation (STI) on the substrate;
forming a patterned mask on the substrate; and
performing an etching process to remove part of the STI for forming the defect on the second cell region.