| CPC H01L 21/68785 (2013.01) [C23C 16/4584 (2013.01); C30B 25/12 (2013.01); H01L 21/68757 (2013.01); H01L 21/68792 (2013.01)] | 36 Claims |

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1. A substrate reactor for epitaxial deposition, the substrate reactor comprising:
a) a vacuum chamber;
b) a tube configured to rotate in the vacuum chamber around a tube geometrical center axis;
c) a substrate carrier forming a pocket on a top surface, the pocket being dimensioned for holding at least one substrate, and forming an aperture comprising a chamfered bottom surface that is centrally located on a bottom surface, the substrate carrier being positioned proximate to a top surface of the tube and configured to maintain a gap therebetween at room temperature, the tube configured to rotate the substrate carrier; and
d) a centering pin comprising a chamfered top surface, wherein the aperture is dimensioned to receive the centering pin comprising the chamfered top surface, the centering pin being positioned along a geometrical center axis of rotation of the substrate carrier so that the substrate carrier rotates about the centering pin, the centering pin having a first end positioned in the aperture on the bottom surface of the substrate carrier and a second end being fixed inside the reactor so that the substrate carrier rotates around the geometrical center axis of the substrate carrier independent of the geometrical center axis of the tube.
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