US 12,322,599 B2
Substrate processing method, modification device and substrate processing system
Norifumi Kohama, Koshi (JP); and Takayuki Ishii, Koshi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 16/973,515
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed May 29, 2019, PCT No. PCT/JP2019/021264
§ 371(c)(1), (2) Date Dec. 9, 2020,
PCT Pub. No. WO2019/239892, PCT Pub. Date Dec. 19, 2019.
Claims priority of application No. 2018-111598 (JP), filed on Jun. 12, 2018.
Prior Publication US 2021/0242027 A1, Aug. 5, 2021
Int. Cl. H01L 21/304 (2006.01); B23K 26/324 (2014.01); B23K 26/53 (2014.01); H01L 21/263 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); B23K 103/00 (2006.01)
CPC H01L 21/304 (2013.01) [B23K 26/324 (2013.01); B23K 26/53 (2015.10); H01L 21/263 (2013.01); H01L 21/67092 (2013.01); H01L 21/67115 (2013.01); H01L 21/68764 (2013.01); B23K 2103/56 (2018.08)] 5 Claims
OG exemplary drawing
 
1. A substrate processing method of processing a substrate, comprising:
forming a modification layer on a surface layer of a rear surface of the substrate by radiating a laser beam; and
processing a front surface of the substrate in a state that the rear surface of the substrate is held by a holder,
wherein in the forming of the modification layer, the modification layer is formed on the surface layer of the rear surface of the substrate such that the rear surface is roughened, thereby decreasing a frictional force between the roughened rear surface of the substrate and a holding surface of the holder.