US 12,322,597 B2
Pitch scaling in microfabrication
Katie Lutker-Lee, Albany, NY (US); and Angelique Raley, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 1, 2022, as Appl. No. 17/590,442.
Prior Publication US 2023/0245890 A1, Aug. 3, 2023
Int. Cl. H01L 21/033 (2006.01); H01L 21/66 (2006.01)
CPC H01L 21/0338 (2013.01) [H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 22/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
forming a first plurality of lines and a first plurality of recesses, each of the first plurality of lines being separated from an adjacent one of the first plurality of lines by one of the first plurality of recesses, the first plurality of lines comprising a first material and formed over a to-be-patterned layer;
performing a cyclic process comprising a plurality of cycles, each of the plurality of cycles comprising:
depositing a mask material within the first plurality of recesses, the mask material deposited within the first plurality of recesses defining a second plurality of lines, each of the second plurality of lines dividing one of the first plurality of recesses to form a second plurality of recesses; and
performing a trimming process to increase critical dimensions of the second plurality of recesses; and
patterning the to-be-patterned layer using the first plurality of lines and the second plurality of lines as an etch mask.