US 12,322,596 B2
Methods for thermal treatment of a semiconductor layer in semiconductor device
Kun Zhang, Wuhan (CN); Lei Liu, Wuhan (CN); Yuancheng Yang, Wuhan (CN); Wenxi Zhou, Wuhan (CN); and Zhiliang Xia, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 1, 2021, as Appl. No. 17/539,677.
Application 17/539,677 is a continuation of application No. PCT/CN2021/127750, filed on Oct. 30, 2021.
Prior Publication US 2023/0138575 A1, May 4, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/02678 (2013.01) [H01L 21/02691 (2013.01); H01L 21/67115 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for thermal treatment on a semiconductor device, comprising:
obtaining a pattern of a treatment area comprising amorphous silicon;
aligning a laser beam with the treatment area, the laser beam in a focused laser spot having a spot area equal to or greater than the treatment area; and
performing a laser anneal on the treatment area by emitting the laser beam towards the treatment area for a treatment period,
wherein:
the spot area comprises a central spot area and a peripheral spot area surrounding the central spot area; and
a dimension of the spot area is at least related to a dimension of the treatment area, a dimension of the peripheral spot area, and an overlay error.