US 12,322,595 B2
Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture
Chun-Yen Peng, Hsinchu (TW); Te-Yang Lai, Hsinchu (TW); Sai-Hooi Yeong, Zhubei (TW); and Chi On Chui, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 10, 2024, as Appl. No. 18/738,742.
Application 17/321,691 is a division of application No. 16/549,502, filed on Aug. 23, 2019, granted, now 11,011,372, issued on May 18, 2021.
Application 18/738,742 is a continuation of application No. 18/446,953, filed on Aug. 9, 2023, granted, now 12,033,853.
Application 18/446,953 is a continuation of application No. 17/321,691, filed on May 17, 2021, granted, now 11,823,894, issued on Nov. 21, 2023.
Prior Publication US 2024/0332010 A1, Oct. 3, 2024
Int. Cl. H01L 21/02 (2006.01); H01L 21/768 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/27 (2025.01); H10D 64/01 (2025.01)
CPC H01L 21/02609 (2013.01) [H01L 21/02181 (2013.01); H01L 21/02356 (2013.01); H01L 21/02667 (2013.01); H01L 21/76829 (2013.01); H01L 21/76871 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/514 (2025.01); H10D 64/017 (2025.01)] 20 Claims
OG exemplary drawing
 
8. A semiconductor device comprising:
a crystallized high-k dielectric layer, the crystallized high-k dielectric layer having multiple crystalline orientations;
a first species located within the crystallized high-k dielectric layer, the first species having a concentration gradient wherein a concentration of the first species decreases as a depth from a top surface of the crystallized high-k dielectric layer increases;
a semiconductor fin in physical contact with the crystallized high-k dielectric layer;
a capping layer in physical contact with the crystallized high-k dielectric layer and located on an opposite side of the crystallized high-k dielectric layer than the semiconductor fin; and
at least one metal layer adjacent to the capping layer.