US 12,322,593 B2
Selective passivation and selective deposition
Jan Willem Hub Maes, Wilrijk (BE); Michael Eugene Givens, Oud-Heverlee (BE); Suvi P. Haukka, Helsinki (FI); Vamsi Paruchuri, Mesa, AZ (US); Ivo Johannes Raaijmakers, Amersfoort (NL); Shaoren Deng, Ghent (BE); Andrea Illiberi, Leuven (BE); Eva E. Tois, Espoo (FI); Delphine Longrie, Ghent (BE); and Viljami J. Pore, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Oct. 20, 2023, as Appl. No. 18/491,428.
Application 18/491,428 is a continuation of application No. 17/470,177, filed on Sep. 9, 2021, granted, now 11,830,732.
Application 17/470,177 is a continuation of application No. 16/588,600, filed on Sep. 30, 2019, granted, now 11,145,506, issued on Oct. 12, 2021.
Claims priority of provisional application 62/805,471, filed on Feb. 14, 2019.
Claims priority of provisional application 62/740,124, filed on Oct. 2, 2018.
Prior Publication US 2024/0047197 A1, Feb. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/02068 (2013.01); H01L 21/02118 (2013.01); H01L 21/02178 (2013.01); H01L 21/02315 (2013.01); H01L 21/02669 (2013.01); H01L 21/324 (2013.01); H01L 21/67213 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of selective deposition on a second dielectric surface of a substrate relative to a first metal or metallic surface of the substrate, the method comprising, in order:
treating the first and second surfaces by exposing the substrate to a silane;
selectively forming a polymer layer from vapor phase reactants on the first surface relative to the second surface;
baking the polymer layer;
controlling a position of an edge of a dielectric layer to be deposited relative to a boundary between the underlying first and second surfaces, the controlling comprising etching the polymer layer for a selected polymer etch time that allows some, but not all, of the polymer layer on the first surface to be removed; and
depositing the dielectric layer on the second surface of the substrate from vapor phase reactants.