	US 12,322,592 B2
	Deposition of silicon-based dielectric films
Geetika Bajaj, New Delhi (IN); Prerna Sonthalia Goradia, Mumbai (IN); Seshadri Ganguli, Sunnyvale, CA (US); Srinivas Gandikota, Santa Clara, CA (US); Robert Jan Visser, Menlo Park, CA (US); and Suraj Rengarajan, Bangalore (IN)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 9, 2022, as Appl. No. 17/667,700.
Claims priority of provisional application 63/148,964, filed on Feb. 12, 2021.
Prior Publication US 2022/0270870 A1, Aug. 25, 2022
Int. Cl. H01L 21/02 (2006.01)

CPC H01L 21/0228 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0234 (2013.01)]

18 Claims

1. A processing method comprising:

conducting an atomic layer deposition (ALD) cycle on a substrate at a temperature in a range of from 50° C. to 500° C., the ALD cycle comprising:

exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor;

purging the processing chamber of the aminosilane precursor;

conducting a nitrogen treatment including a nitrogen-containing plasma or a hydrazine-containing base on the substrate;

exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent; and

purging the processing chamber of the oxidizing agent; and

repeating the ALD cycle to form a silicon oxide (SiO₂) film.