US 12,322,575 B2
Etching processes and processing assemblies
Bablu Mukherjee, Nagoya (JP); René Henricus Jozef Vervuurt, Leuven (BE); Takayoshi Tsutsumi, Nagoya (JP); Nobuyoshi Kobayashi, Kawagoe (JP); and Masaru Hori, Nissin (JP)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on May 5, 2023, as Appl. No. 18/143,652.
Claims priority of provisional application 63/339,561, filed on May 9, 2022.
Prior Publication US 2023/0386792 A1, Nov. 30, 2023
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32357 (2013.01) [H01L 21/31116 (2013.01); H01J 2237/334 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of selectively etching material from a first surface of a substrate relative to a second surface of the substrate, the method comprising:
providing the substrate having a first surface comprising an etchable material, and a second surface comprising a non-etchable material in a reaction chamber;
providing hydrogen-containing plasma into the reaction chamber to reduce the etchable material to a predetermined depth; and
providing remotely-generated reactive halogen species and hydrogen into the reaction chamber to selectively etch the reduced etchable material.