US 12,322,574 B2
System for growth of one or more crystalline materials
Tarun Sharda, Rajasthan (IN); and Rajneesh Bhandari, Rajasthan (IN)
Assigned to Sigma Carbon Technologies, Rajasthan (IN)
Filed by Sigma Carbon Technologies, Rajasthan (IN)
Filed on Mar. 23, 2021, as Appl. No. 17/209,480.
Claims priority of application No. 202011039555 (IN), filed on Sep. 13, 2020.
Prior Publication US 2022/0084793 A1, Mar. 17, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/511 (2006.01); C30B 25/00 (2006.01); C30B 29/04 (2006.01)
CPC H01J 37/32266 (2013.01) [C23C 16/511 (2013.01); C30B 29/04 (2013.01); H01J 37/32192 (2013.01); H01J 37/32311 (2013.01); H01J 37/32972 (2013.01); C30B 25/00 (2013.01); H01J 37/32201 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A system for growing one or more crystalline materials, the system comprising:
a microwave plasma reactor comprising a Chemical Vapor Deposition (CVD) chamber configured to contain one or more crystalline material seeds having a growing surface configured to grow a crystalline material, wherein the crystalline material requires a defined proposition of plasma constituents to grow; and
an Integrated Microwave Generator System (IMGS) configured to control, continuously and in real-time, a plurality of parameters necessary to maintain the defined proposition of plasma constituents, wherein the plurality of parameters comprises a power density, the IMGS comprising:
a chip-based microwave generator;
a pressure controller;
an IMGS controller; and
an optical emission spectrometer (OES) configured to provide a real-time feedback loop to the IMGS controller based on microwave plasma input from the microwave plasma reactor, the OES comprising;
a processor;
a non-transitory computer readable medium in electronic communication with the processor; and
instructions stored in the memory, the instructions being executable by the processor to:
receive, continuously and in real-time, microwave plasma input from the microwave plasma reactor;
monitor, continuously and in real-time, a concentration of atomic hydrogen and at least two plasma constituents above the growing surface, wherein the at least two plasma constituents are selected from the group consisting of OH, N2, CN, Hδ, CxHy, BH, Hγ, CO, H2, C2, Hβ, CO+, O2+, Hα, O2, O, and Ar;
generate, in real-time, feedback based on the concentration of the atomic hydrogen and the at least two plasma constituents; and
automatically adjust the power density in response to the feedback to control the atomic hydrogen concentration on the growing surface and to maintain the defined proposition of plasma constituents,
wherein the IMGS is configured to automatically adjust the power density in response to a variation in the atomic hydrogen concentration of 0.25% or less.