| CPC H01J 37/32174 (2013.01) [C23C 16/045 (2013.01); C23C 16/34 (2013.01); C23C 16/4554 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/0234 (2013.01); H01L 21/3105 (2013.01); H01L 21/76856 (2013.01); H01L 21/0228 (2013.01)] | 13 Claims |

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1. A method of forming a barrier layer on a substrate, comprising:
treating an exposed barrier layer deposited over a dielectric layer on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the barrier layer to a plasma to form a treated exposed barrier layer;
wherein the pulsing the bias power comprises a first pulsing waveform from an initial low magnitude to a higher first magnitude providing a first amount of RF power up to about 500 watts at a pulse frequency of about 1 Hz to about 10 kHz, followed by a second pulsing waveform different than the first pulsing waveform from the initial low magnitude to a higher second magnitude providing a second amount of RF power up to about 500 watts at a pulse frequency of about 1 Hz to about 10 KHz, wherein the second amount of RF power is greater than the first amount of RF power, wherein the barrier layer comprises a metal nitride, and wherein the treated exposed barrier layer has a higher density and lower resistivity relative to the exposed barrier layer prior to the treating.
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