US 12,322,553 B2
Dielectric composition and multilayer ceramic electronic component
Yuichiro Sueda, Tokyo (JP); Kengo Aizawa, Tokyo (JP); Shota Kumagai, Tokyo (JP); Takeshi Shouji, Tokyo (JP); Satoshi Sugawara, Tokyo (JP); Masatoshi Tarutani, Tokyo (JP); Atsushi Yamada, Yurihonjo (JP); and Manabu Kumagai, Yurihonjo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on May 11, 2023, as Appl. No. 18/315,563.
Claims priority of application No. 2022-087870 (JP), filed on May 30, 2022.
Prior Publication US 2023/0386745 A1, Nov. 30, 2023
Int. Cl. H01G 4/12 (2006.01); C04B 35/49 (2006.01); H01G 4/008 (2006.01); H01G 4/012 (2006.01); H01G 4/30 (2006.01)
CPC H01G 4/1227 (2013.01) [C04B 35/49 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/30 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A dielectric composition, comprising:
dielectric grains containing a main component represented by a composition formula [(CaxSr(1-x))O]m[(TiyHfzZr(1-y-z))O2];
a grain boundary phase located between the dielectric grains; and
segregation grains each containing at least Ca, Si, and O (oxygen), wherein
the composition formula satisfies 1.020<m,
a first segregation grain is defined as a segregation further containing Mn among the segregation grains each containing at least Ca, Si, and O,
a second segregation grain is defined as a segregation containing substantially no Mn among the segregation grains each containing at least Ca, Si, and O, and
N1/(N1+N2) is more than 0.23 and 1.00 or less, in which N1 is a number density of first segregation grains in a cross-section of the dielectric composition, and N2 is a number density of second segregation grains in the cross-section of the dielectric composition.