US 12,322,522 B2
Low-voltage electron beam control of conductive state at a complex-oxide interface
Jeremy Levy, Pittsburgh, PA (US)
Assigned to University of Pittsburgh—Of the Commonwealth System of Higher Education, Pittsburgh, PA (US)
Filed by University of Pittsburgh—Of the Commonwealth System of Higher Education, Pittsburgh, PA (US)
Filed on Dec. 22, 2023, as Appl. No. 18/395,196.
Application 18/395,196 is a continuation of application No. 17/917,669, granted, now 11,894,162, previously published as PCT/US2021/017644, filed on Feb. 11, 2021.
Claims priority of provisional application 63/009,211, filed on Apr. 13, 2020.
Prior Publication US 2024/0412889 A1, Dec. 12, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G21K 5/04 (2006.01); H01J 37/147 (2006.01); H01J 37/28 (2006.01); H01J 37/317 (2006.01); H10N 52/01 (2023.01); H10N 60/01 (2023.01); H10N 60/30 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC G21K 5/04 (2013.01) [H01J 37/147 (2013.01); H01J 37/28 (2013.01); H01J 37/3174 (2013.01); H10N 52/01 (2023.02); H10N 60/01 (2023.02); H10N 60/30 (2023.02); H10N 70/041 (2023.02); H10N 70/257 (2023.02); H01J 2237/004 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method, comprising:
(a) directing an ultra-low voltage electron beam to a surface of a first insulating layer, the first insulating layer disposed on a second insulating layer, the second insulting layer disposed on silicon; and
(b) modifying, by application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property, the interface being between the first insulating layer and the second insulating layer.