	US 12,322,464 B2
	Data storage device for checking a defect of row lines and an operation method thereof
Kyungduk Lee, Suwon-si (KR); Ho-Sung Ahn, Suwon-si (KR); and Youn-Soo Cheon, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 10, 2023, as Appl. No. 18/132,472.
Claims priority of application No. 10-2022-0072324 (KR), filed on Jun. 14, 2022.
Prior Publication US 2023/0402120 A1, Dec. 14, 2023
Int. Cl. G11C 29/02 (2006.01); G11C 29/52 (2006.01)

CPC G11C 29/022 (2013.01) [G11C 29/52 (2013.01)]

19 Claims

1. A data storage device, comprising:

a memory device including a plurality of memory blocks; and

a memory controller configured to control the memory device,

wherein the plurality of memory blocks are connected with row lines, wherein the row lines include word lines,

wherein the memory controller is further configured to:

check whether a resistive defect occurs at the row lines except for the word lines; and

set a program operation time of a memory block corresponding to a row line, at which the resistive defect occurs, to be longer than a program operation time of the other memory blocks.