US 12,322,461 B2
Dielectric film based one-time programmable (OTP) memory cell
Abhijeet Paul, Escondido, CA (US); and Mishel Matloubian, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Mar. 20, 2023, as Appl. No. 18/186,734.
Prior Publication US 2024/0321369 A1, Sep. 26, 2024
Int. Cl. G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 23/525 (2006.01); H10B 20/25 (2023.01)
CPC G11C 17/165 (2013.01) [G11C 17/18 (2013.01); H01L 23/5256 (2013.01); H10B 20/25 (2023.02)] 30 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a conductive element on an isolation structure;
a dielectric film;
a first contact structure including a conductive filling and an intermediate layer surrounding the conductive filling, wherein at least a portion of the dielectric film is disposed between the conductive element and the first contact structure and is in direct contact with the intermediate layer; and
a second contact structure disposed on and electrically coupled with the conductive element,
wherein:
the dielectric film is configured as a resistive element with the first contact structure and the second contact structure being terminals of the resistive element after a dielectric breakdown has occurred within the portion of the dielectric film, and
the dielectric film is configured as an insulator of a capacitive element with the first contact structure and the second contact structure being terminals of the capacitive element in a case that no dielectric breakdown has occurred within the portion of the dielectric film.