US 12,322,449 B2
Memory device, programming method of memory device, and memory system
Jing Wei, Hubei (CN); and Xiaojiang Guo, Hubei (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Jun. 6, 2023, as Appl. No. 18/330,202.
Claims priority of provisional application 63/477,936, filed on Dec. 30, 2022.
Claims priority of application No. 202310577096.7 (CN), filed on May 18, 2023.
Prior Publication US 2024/0221839 A1, Jul. 4, 2024
Int. Cl. G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/102 (2013.01) [G11C 16/08 (2013.01); G11C 16/3459 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for programming a memory device comprising memory cells and a word line coupled to a memory cell, the method comprising:
performing a programming operation on the memory cell using incremental step pulse programming (ISPP), comprising:
applying one or more first voltage steps to the word line using a first step value to increase a threshold voltage of the memory cell toward a programming state;
determining a quantity of memory cells that have a threshold voltage between first and second verification voltages, wherein the second verification voltage is less than the first verification voltage and outside of a range of threshold voltages corresponding to the programming state;
determining a step adjustment value based on the determining of the quantity; and
adjusting the first step value using the step adjustment value.