	US 12,322,443 B2
	Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
Jordan D. Greenlee, Boise, ID (US); David Ross Economy, Boise, ID (US); John D. Hopkins, Meridian, ID (US); Nancy M. Lomeli, Boise, ID (US); Jiewei Chen, Meridian, ID (US); Rita J. Klein, Boise, ID (US); Everett A. McTeer, Eagle, ID (US); and Aaron P. Thurber, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 28, 2022, as Appl. No. 17/851,865.
Claims priority of provisional application 63/348,080, filed on Jun. 2, 2022.
Prior Publication US 2023/0395149 A1, Dec. 7, 2023
Int. Cl. H10B 41/10 (2023.01); G11C 16/04 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)

CPC G11C 16/0483 (2013.01) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)]

41 Claims

1. A method used in forming a memory array comprising strings of memory cells, comprising:

forming memory block regions individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings extending through the insulative tiers and the conductive tiers, the conductive tiers individually comprising a void-space extending laterally-across individual of the memory-block regions;

forming at least one of conductive or semiconductive material in the void-space laterally-outward of individual of the channel-material strings; and

forming conductive molybdenum-containing metal material in the void-space directly against the at least one of the conductive or the semiconductive material and forming therefrom a conductive line comprising the conductive molybdenum-containing metal material, the at least one of the conductive or the semiconductive material being of different composition from that of the conductive molybdenum-containing metal material.