US 12,322,428 B2
SOT-MRAM with shared selector
MingYuan Song, Hsinchu (TW); Shy-Jay Lin, Jhudong Township (TW); Chien-Min Lee, Hsinchu (TW); and William Joseph Gallagher, Ardsley, NY (US)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 22, 2023, as Appl. No. 18/321,196.
Application 18/321,196 is a continuation of application No. 17/696,394, filed on Mar. 16, 2022, granted, now 11,699,474.
Application 17/696,394 is a continuation of application No. 17/002,351, filed on Aug. 25, 2020, granted, now 11,289,143, issued on Mar. 29, 2022.
Claims priority of provisional application 62/927,875, filed on Oct. 30, 2019.
Prior Publication US 2023/0326508 A1, Oct. 12, 2023
Int. Cl. G01R 33/09 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01)
CPC G11C 11/1675 (2013.01) [G01R 33/093 (2013.01); G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A device comprising:
a first metal interconnection and a second metal interconnection on a substrate;
a first inter-metal dielectric layer (IMD) around the first metal interconnection and the second metal interconnection;
a channel layer on the first IMD layer, the first metal interconnection, and the second metal interconnection, wherein the channel layer is a spin-orbital-transfer (SOT) layer; and
a magnetic tunneling junction (MTJ) on the channel layer.