US 12,322,419 B2
Spin injection assisted magnetic recording
Yan Wu, Cupertino, CA (US)
Assigned to Headway Technologies, Inc., Milpitas, CA (US)
Filed by Headway Technolobies, Inc., Milpitas, CA (US)
Filed on Jul. 26, 2023, as Appl. No. 18/359,436.
Application 18/359,436 is a division of application No. 17/534,574, filed on Nov. 24, 2021, granted, now 11,756,577.
Application 17/534,574 is a division of application No. 16/593,198, filed on Oct. 4, 2019, granted, now 10,861,084, issued on Nov. 30, 2021.
Prior Publication US 2024/0170010 A1, May 23, 2024
Int. Cl. G11B 5/012 (2006.01); G11B 5/02 (2006.01); G11B 5/11 (2006.01); G11B 5/127 (2006.01); G11B 5/31 (2006.01)
CPC G11B 5/012 (2013.01) [G11B 5/02 (2013.01); G11B 5/11 (2013.01); G11B 5/1278 (2013.01); G11B 5/3133 (2013.01); G11B 5/3146 (2013.01); G11B 5/315 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A spin injection assisted magnetic recording (SIAMR) structure, comprising:
(a) a main pole (MP) that is configured to generate a magnetic (write) field which is directed orthogonal to an air bearing surface (ABS) and through a MP tip at the ABS;
(b) a write shield (WS) with a side at the ABS through which a return field passes orthogonal to the ABS, and having a bottom surface that faces a MP trailing side; and
(c) a SIAMR stack of layers formed in a write gap (WG) wherein a first layer contacts the WS bottom surface, and a second layer contacts the MP trailing side, wherein the SIAMR stack of layers comprises:
(1) a ferromagnetic (FM) layer having a magnetization substantially in a direction of a WG field flux between the MP and WS;
(2) a spin preservation (SP) layer that adjoins a first side of the FM layer, and is either the first layer that conducts spin polarized current from the FM layer into the WS at the WS bottom surface, or is the second layer that conducts spin polarized current from the FM layer into the MP trailing side, and wherein the SIAMR stack of layers is configured so that when a current (la) is injected from a source into the FM layer, spin polarized electrons flow across the SP layer to generate a magnetization proximate to the MP trailing side that enhances a local MP magnetization and the write field when the SP layer is the second layer, or produces a magnetization proximate to the WS bottom surface that enhances a local WS magnetization and the return field when the SP layer is the first layer; and
(3) the other of the first layer or second layer that comprises a stack of layers wherein a non-magnetic spacer is sandwiched between two conductive spin killing (non-spin preserving) layers, and contacts a second side of the FM layer opposite to the FM layer first side.