| CPC G09G 3/3258 (2013.01) [G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); H10K 59/131 (2023.02); G09G 2300/0426 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/0286 (2013.01)] | 19 Claims |
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1. A display substrate, comprising:
a base substrate, comprising a display region, wherein the display region comprises a plurality of repeating units arranged in array, each of the plurality of repeating units comprises a transparent region and a pixel region which are arranged in a first direction, the pixel region comprises a plurality of sub-pixels, each of the plurality of sub-pixels comprises a sub-pixel driving circuit and a light-emitting element, the light-emitting element is located on a side of the sub-pixel driving circuit away from the base substrate, and the sub-pixel driving circuit is configured to drive the light-emitting element to emit light; and
a plurality of sensing signal lines provided on the base substrate and extending along a second direction different from the first direction, wherein two lines of repeating units are provided between adjacent two of the plurality of sensing signal lines, the two lines of repeating units respectively extend along the second direction, and each of the plurality of sensing signal lines is connected with sub-pixel driving circuits of the plurality of sub-pixels of two lines of repeating units which are adjacent to the each of the plurality of sensing signal lines and extend along the second direction, and is configured to provide a reference voltage signal, wherein
the sub-pixel driving circuit comprises a driving transistor and a storage capacitor,
the light-emitting element comprises a first electrode, a second electrode and a light-emitting layer located between the first electrode and the second electrode; the second electrode is a cathode and has a light-shielding auxiliary electrode which is electrically connected with the second electrode and made of a metal material, the auxiliary electrode is arranged on the base substrate and located at a side of the sub-pixel driving circuit close to the base substrate, and
an orthographic projection of the auxiliary electrode on a main surface of the base substrate overlaps with the light-emitting element, the driving transistor and the storage capacitor in the pixel region of the repeating unit and does not overlap with the transparent region of the repeating unit, wherein
the display region comprises a first repeating unit and a second repeating unit that are adjacently arranged along the first direction, the plurality of sub-pixel driving circuits in the pixel region of the first repeating unit and the plurality of sub-pixel driving circuits in the pixel region of the second repeating unit respectively comprise a first sub-pixel driving circuit, a second sub-pixel driving circuit, and a third sub-pixel driving circuit that are arranged in the first direction;
each of the sub-pixel driving circuits comprises a data writing circuit, a driving circuit, a charge storage circuit, and a sensing circuit; the data writing circuit comprises a data writing transistor, the driving circuit comprises the driving transistor, and the sensing circuit comprises a sensing transistor;
the display substrate further comprises a semiconductor layer, a first conductive layer, a second conductive layer, a second insulating layer, and a fourth insulating layer located on the base substrate;
the semiconductor layer comprises an active layer of the data writing transistor, an active layer of the driving transistor, and an active layer of the sensing transistor;
the second conductive layer comprises a first connection line extending along the first direction, the first connection line is connected with first electrodes of sensing transistors of the first sub-pixel driving circuit, the second sub-pixel driving circuit, and the third sub-pixel driving circuit of the first repeating unit or the second repeating unit through at least part of a third via,
the first electrode of the sensing transistor comprises a first sub-portion and a second sub-portion connected with each other along the second direction, a part of the third via is configured to penetrate through the second insulating layer and the fourth insulating layer to expose the active layer of the sensing transistor, another part of the third via is configured to penetrate through the second insulating layer to expose the first connection line; and
the first sub-portion is in contact with the active layer of the sensing transistor, and the second sub-portion is in contact with the first connection line.
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