US 12,321,640 B2
Memory management method, memory storage device and memory control circuit unit
Yen Chen Yeh, Hsinchu (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Jul. 11, 2023, as Appl. No. 18/349,962.
Claims priority of application No. 112120278 (TW), filed on May 31, 2023.
Prior Publication US 2024/0402943 A1, Dec. 5, 2024
Int. Cl. G06F 3/06 (2006.01); G06F 12/02 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/061 (2013.01); G06F 3/0634 (2013.01); G06F 3/0673 (2013.01); G06F 12/0253 (2013.01); G06F 2212/7202 (2013.01); G06F 2212/7204 (2013.01); G06F 2212/7205 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A memory management method, applied to a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, the physical units comprise a plurality of first type physical units and a plurality of second type physical units, the first type physical units adopt a first operation mode, the second type physical units adopt a second operation mode, and the memory management method comprises:
grouping a part of physical units in the second type physical units to a first reserved region and a second reserved region, wherein the physical units belonging to the first reserved region and the second reserved region are reserved for usage in a data merging operation; and
performing a first data merging operation, comprising:
collecting first data from a source unit in the physical units;
selecting a target unit from the first reserved region or the second reserved region according to an attribute of the source unit; and
storing the first data to the target unit.