US 12,321,620 B2
Techniques for memory zone size adjustment
Yanhua Bi, Shanghai (CN)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 21, 2022, as Appl. No. 17/726,101.
Claims priority of provisional application 63/230,498, filed on Aug. 6, 2021.
Prior Publication US 2023/0043338 A1, Feb. 9, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0631 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a memory device; and
a controller coupled with the memory device and configured to cause the apparatus to:
perform a first flushing operation to transfer first data from a first block of memory cells to a second block of memory cells;
receive, at the memory device, a command to remove temporary data from at least the first block of memory cells based at least in part on performing the first flushing operation, wherein the first block of memory cells comprises a zone having a first zone size, and wherein the first zone size corresponds to a first amount of memory cells that are used to store at least a portion of the temporary data;
determine whether a second amount of memory cells satisfies a threshold that is based at least in part on an available zone size, wherein the second amount of memory cells is based at least in part on a size of the temporary data, and wherein the available zone size corresponds to a third amount of memory cells of the first block of memory cells available to store the temporary data;
configure the zone to increase or decrease by a quantity of memory cells from the first zone size to a second zone size in the first block of memory cells based at least in part on determining whether the second amount of memory cells satisfies the threshold, wherein the second zone size corresponds to a fourth amount of memory cells of the first block of memory cells, wherein the fourth amount of memory cells is less than or equal to the third amount of memory cells of the first block of memory cells associated with the available zone size;
execute the received command to remove the temporary data from at least the first block of memory cells based at least in part on configuring the zone to increase or decrease; and
store, based at least in part on executing the received command, second temporary data in the fourth amount of memory cells of the first block of memory cells.