US 12,320,778 B2
Method of processing substrate, substrate processing apparatus, method of manufacturing semiconductor processing apparatus, and recording medium
Teruo Yoshino, Toyama (JP); Naofumi Ohashi, Toyama (JP); and Toshiro Koshimaki, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Nov. 1, 2023, as Appl. No. 18/499,589.
Application 18/499,589 is a continuation of application No. 17/682,436, filed on Feb. 28, 2022, granted, now 11,841,343.
Claims priority of application No. 2021-152122 (JP), filed on Sep. 17, 2021.
Prior Publication US 2024/0142409 A1, May 2, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 29/14 (2006.01); C23C 16/458 (2006.01); G01M 99/00 (2011.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H04R 1/08 (2006.01)
CPC G01N 29/14 (2013.01) [C23C 16/4583 (2013.01); G01M 99/005 (2013.01); H01L 21/67739 (2013.01); H04R 1/08 (2013.01); H01L 21/67259 (2013.01); H01L 21/67793 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a process chamber configured to be capable of processing a substrate;
a first transfer chamber configured to be capable of accommodating a first transfer that includes a gas-filled container filled with a gas and is configured to be capable of transporting the substrate to the process chamber in a vacuum;
a sound information receiver configured to be capable of receiving sound information detected by a first microphone installed inside the gas-filled container; and
an abnormality detector configured to be capable of detecting an abnormality of the first transfer by comparing the sound information with a preset threshold value.