US 12,320,032 B2
Ferroelectric thin film and forming method thereof
Jungwon Park, Seoul (KR); and Kunwoo Park, Seoul (KR)
Assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR); and INSTITUTE FOR BASIC SCIENCE, Daejeon (KR)
Filed by SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR); and INSTITUTE FOR BASIC SCIENCE, Daejeon (KR)
Filed on Mar. 30, 2023, as Appl. No. 18/193,483.
Claims priority of application No. 10-2022-0043122 (KR), filed on Apr. 6, 2022.
Prior Publication US 2023/0323562 A1, Oct. 12, 2023
Int. Cl. C30B 29/16 (2006.01); C30B 1/02 (2006.01); C30B 29/68 (2006.01)
CPC C30B 29/16 (2013.01) [C30B 1/026 (2013.01); C30B 29/68 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of forming a ferroelectric thin film comprising:
forming a sacrificial seed layer on a first substrate;
forming a ferroelectric thin film on the sacrificial seed layer; and
transferring the ferroelectric thin film to a second substrate,
wherein the first substrate comprises a STO (SrTiQ3) substrate, the sacrificial seed layer comprises a LSMO (La0.7Sr0.3MnO3) layer, and the ferroelectric thin film comprises a HfO2 thin film.