US 12,320,030 B2
Method of using sic container
Tadaaki Kaneko, Sanda (JP); Yasunori Kutsuma, Sanda (JP); Koji Ashida, Sanda (JP); and Ryo Hashimoto, Sanda (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Nishinomiya (JP); and TOYOTA TSUSHO CORPORATION, Nagoya (JP)
Filed on Oct. 17, 2023, as Appl. No. 18/380,897.
Application 18/380,897 is a division of application No. 17/734,511, filed on May 2, 2022, abandoned.
Application 17/734,511 is a division of application No. 16/096,475, granted, now 11,359,307, issued on Jun. 14, 2022, previously published as PCT/JP2017/016738, filed on Apr. 27, 2017.
Claims priority of application No. 2016-092073 (JP), filed on Apr. 28, 2016.
Prior Publication US 2024/0044042 A1, Feb. 8, 2024
Int. Cl. C30B 29/36 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); H01L 21/02 (2006.01)
CPC C30B 23/063 (2013.01) [C30B 23/025 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02631 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method of using a SiC container in which Si vapor and C vapor are generated in an internal space therein during a heat treatment, wherein the SiC container serves as a raw material for a growth of an underlying substrate and is a fitted container including an upper container and a lower container that are fitted together, the method comprising:
housing a SiC substrate as the underlying substrate in an internal space of the SiC container; and
heating the SiC container with Si atmosphere around the SiC container, such that Si vapor enters the internal space of the SiC container through a gap between the upper container and the lower container,
wherein an outside atmosphere of the SiC container has an equilibrium vapor pressure of Si, and
wherein a partial pressure of vapor containing C atoms in an internal atmosphere of the SiC container is higher than that in the outside atmosphere of the SiC container.