US 12,320,001 B2
Compositions and methods using same for thermal deposition silicon-containing films
Chandra Haripin, San Marcos, CA (US); and Xinjian Lei, Vista, CA (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Appl. No. 17/612,996
Filed by VERSUM MATERIALS US, LLC, Tempe, AZ (US)
PCT Filed May 21, 2020, PCT No. PCT/US2020/033897
§ 371(c)(1), (2) Date Nov. 19, 2021,
PCT Pub. No. WO2020/236994, PCT Pub. Date Nov. 26, 2020.
Claims priority of provisional application 62/850,717, filed on May 21, 2019.
Prior Publication US 2022/0213597 A1, Jul. 7, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01)
CPC C23C 16/45527 (2013.01) [C23C 16/402 (2013.01); C23C 16/4408 (2013.01)] 8 Claims
 
1. A process of depositing a silicon-containing film onto a substrate, which comprises:
a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon compound having at least one isocyanato group having the following Formula I:
R1nSi(NR2R3)m(NCO)4-m-n  I
wherein R1 is independently selected from hydrogen, a linear C1 to C6 alkyl group, a branched C3 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group; R2 and R3 are each independently selected from the group consisting of hydrogen, a C1 to C6 linear alkyl group, a branched C3 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group, and may or may not be linked to form a cyclic ring structure; n=0, 1, or 2; and m=0, 1, 2, or 3, wherein n+m=0, 1, 2 or 3;
c) purging the reactor with purge gas;
d) introducing into the reactor a mixture of an oxygen source and an amine catalyst to react with the at least one silicon compound and produce the silicon oxide film; and
e) purging reactor with purge gas;
wherein steps b through e are repeated until a desired thickness of the silicon oxide film is deposited onto the substrate, wherein the process is conducted at one or more temperatures ranging from 20 to 600° C. and one or more pressures ranging from 50 miliTorr (mT) to 760 Torr.