US 12,319,581 B2
Method of fabricating silicon carbide material by performing a first annealing process to control average resistivity
Ching-Shan Lin, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2021, as Appl. No. 17/385,940.
Claims priority of provisional application 63/056,733, filed on Jul. 27, 2020.
Prior Publication US 2022/0024773 A1, Jan. 27, 2022
Int. Cl. C30B 33/02 (2006.01); C01B 32/956 (2017.01); C23C 14/06 (2006.01); C23C 14/58 (2006.01); C30B 29/36 (2006.01); H10D 62/832 (2025.01)
CPC C01B 32/956 (2017.08) [C23C 14/0635 (2013.01); C23C 14/5806 (2013.01); C30B 29/36 (2013.01); C30B 33/02 (2013.01); C01P 2006/40 (2013.01); H10D 62/8325 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A method of fabricating a silicon carbide material, comprising:
performing a first annealing process on a wafer or on a crystal, wherein conditions of the first annealing process comprise:
a heating rate of 10° C./min to 30° C./min, an annealing temperature of 1950° C. to 2000° C., and a constant temperature annealing time of 30 minutes or more and 4 hours or less for performing the first annealing process,
wherein after performing the first annealing process, an average resistivity of the wafer or the crystal is greater than 1010 Ω·cm.