US RE49,988 E1
Integrated circuit devices
Myung-Gil Kang, Seoul (KR); Sung-Bong Kim, Suwon-si (KR); Chang-Woo Oh, Suwon-si (KR); and Dong-Won Kim, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 6, 2022, as Appl. No. 17/569,902.
Application 17/569,902 is a division of application No. 16/432,340, filed on Jun. 5, 2019, abandoned.
Application 15/136,450 is a division of application No. 14/162,052, filed on Jan. 23, 2014, granted, now 9,324,850, issued on Apr. 26, 2016.
Application 16/432,340 is a reissue of application No. 15/136,450, filed on Apr. 22, 2016, granted, now 9,673,099, issued on Jun. 6, 2017.
Application 17/569,902 is a reissue of application No. 15/136,450, filed on Apr. 22, 2016, granted, now 9,673,099, issued on Jun. 6, 2017.
Claims priority of application No. 10-2013-0020612 (KR), filed on Feb. 26, 2013.
Int. Cl. H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 29/775 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01)] 39 Claims
OG exemplary drawing
 
[ 6. An integrated circuit device comprising:
a substrate including a first region and a second region;
a first nanowire shaped transistor disposed on the first region of the substrate, and including a first source/drain; and
a second nanowire shaped transistor disposed on the second region of the substrate, and including a second source/drain, wherein:
the first source/drain has a first thickness, and
the second source/drain has a second thickness that is different from the first thickness, lower surfaces of the first source/drain and the second source/drain being at different heights relative to a bottom of the substrate. ]