US 11,997,929 B2
Thermoelectric material and preparation method therefor
Jongrae Lim, Seoul (KR); Jun Kim, Seoul (KR); Jooyoung Park, Seoul (KR); Jeonghun Son, Seoul (KR); and Youngil Jang, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/422,321
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Jun. 11, 2019, PCT No. PCT/KR2019/006967
§ 371(c)(1), (2) Date Jul. 12, 2021,
PCT Pub. No. WO2020/149464, PCT Pub. Date Jul. 23, 2020.
Claims priority of provisional application 62/793,898, filed on Jan. 18, 2019.
Prior Publication US 2022/0102607 A1, Mar. 31, 2022
Int. Cl. H10N 10/852 (2023.01); H10N 10/01 (2023.01); H10N 10/853 (2023.01); H10N 10/857 (2023.01)
CPC H10N 10/852 (2023.02) [H10N 10/01 (2023.02); H10N 10/853 (2023.02); H10N 10/857 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A thermoelectric material comprising:
a matrix compound having a composition of Chemical Formula 1 or Chemical Formula 2 below;
nanoparticles having a composition of Chemical Formula 3 dispersed in the matrix compound, wherein the nanoparticles have a tellurium (Te)-based composition; and
grains having crystal orientation directions aligned in a same direction,
where:
(AB2)x(Bi2Se2.7Te0.3)1-x,  <Chemical Formula 1>
where A is a divalent cation element, B is a monovalent anion element, and x satisfies 0<x≤0.4,
(CB)x(Bi2Se2.7Te0.3)1-x,  <Chemical Formula 2>
where C is a monovalent cation element, B is a monovalent anion element, and x satisfies 0<x≤0.4, and
Cu2Te,  <Chemical Formula 3>
wherein the copper (Cu) is contained in an amount of 1 to 5% by weight of the matrix compound and the tellurium (Te) is contained in an amount of 20 to 25% by weight of the matrix compound, and
wherein the nanoparticles are dispersed in the matrix compound in an amount of 26 to 30% by weight of the matrix compound and the thermoelectric material has an average grain size of 5 to 6 micron.