US 11,997,917 B2
Quantum dot electroluminescence device
Yusaku Konishi, Yokohama (JP); Takahiro Fujiyama, Yokohama (JP); Fumiaki Kato, Yokohama (JP); Keigo Furuta, Yokohama (JP); Kiyohiko Tsutsumi, Suwon-si (KR); Masashi Tsuji, Hwaseong-si (KR); and Takao Motoyama, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 30, 2023, as Appl. No. 18/128,470.
Application 18/128,470 is a division of application No. 16/729,646, filed on Dec. 30, 2019, granted, now 11,631,815.
Claims priority of application No. 2018-248419 (JP), filed on Dec. 28, 2018; and application No. 10-2019-0176495 (KR), filed on Dec. 27, 2019.
Prior Publication US 2024/0114765 A1, Apr. 4, 2024
Int. Cl. H01L 51/00 (2006.01); H01L 51/50 (2006.01); H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 85/10 (2023.01)
CPC H10K 85/151 (2023.02) [H10K 50/115 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A quantum dot electroluminescence device, comprising
a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer,
wherein the hole transport layer comprises a polymer material and a low molecular material,
the light emitting layer comprises a quantum dot having a core-shell structure,
wherein a content ratio of the polymer material in the hole transport layer is greater than or equal to about 70 weight percent and less than or equal to about 90 weight percent, based on 100 weight percent of the polymer material and the low molecular material, such that a residual film ratio of the hole transport layer is greater than or equal to about 95%, and
the polymer material has an amine structure.