US 11,997,847 B2
Thin film transistors with spacer controlled gate length
Abhishek A. Sharma, Hillsboro, OR (US); Van H. Le, Portland, OR (US); Gilbert Dewey, Beaverton, OR (US); Shriram Shivaraman, Hillsboro, OR (US); Yih Wang, Portland, OR (US); Tahir Ghani, Portland, OR (US); and Jack T. Kavalieros, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jan. 31, 2022, as Appl. No. 17/588,938.
Application 17/588,938 is a continuation of application No. 16/473,592, granted, now 11,296,087, previously published as PCT/US2017/025593, filed on Mar. 31, 2017.
Prior Publication US 2022/0157820 A1, May 19, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01)
CPC H10B 12/30 (2023.02) [H01L 29/41733 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/78669 (2013.01); H01L 29/78693 (2013.01); H10B 12/05 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A method for forming a thin film transistor (TFT), the method comprising:
forming a gate electrode above a substrate;
forming a gate dielectric layer conformally covering the gate electrode and the substrate;
forming a channel layer above the gate dielectric layer;
forming a source electrode above the channel layer, wherein the source electrode is separated from another source electrode of an adjacent transistor by a pitch, and the source electrode has a first width;
subsequent to forming the source electrode, forming a spacer next to the source electrode and above the channel layer, wherein the spacer has a second width, and overlaps with the gate electrode; and
subsequent to forming the spacer, forming a drain electrode next to the spacer and above the channel layer, wherein the drain electrode has a third width, and wherein a sum of the first width, the second width, and the third width is less than the pitch.