US 11,996,473 B2
Flexible transistors with near-junction heat dissipation
Zhenqiang Ma, Middleton, WI (US); Huilong Zhang, Madison, WI (US); and Shaoqin Gong, Middleton, WI (US)
Assigned to Wisconsin Alumni Research Foundation, Madison, WI (US)
Filed by Wisconsin Alumni Research Foundation, Madison, WI (US)
Filed on Oct. 6, 2022, as Appl. No. 17/938,378.
Application 17/938,378 is a division of application No. 16/862,825, filed on Apr. 30, 2020, granted, now 11,495,512.
Prior Publication US 2023/0170273 A1, Jun. 1, 2023
Int. Cl. H01L 29/737 (2006.01); H01L 23/367 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/737 (2013.01) [H01L 23/367 (2013.01); H01L 23/3672 (2013.01); H01L 23/5226 (2013.01); H01L 29/66242 (2013.01); H01L 29/66318 (2013.01); H01L 29/66431 (2013.01); H01L 29/732 (2013.01); H01L 29/7371 (2013.01); H01L 29/7375 (2013.01); H01L 29/778 (2013.01); H01L 2924/13051 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A heterojunction bipolar transistor comprising:
a mesa stack comprising:
optionally, a sub-collector;
a collector;
an emitter; and
a base disposed between the collector and the emitter;
a collector contact in electrical communication with the collector;
an emitter contact over the emitter;
a base contact in electrical communication with the base;
a dielectric polymer that extends beneath and is in contact with a lower surface of the collector or, if present, the sub-collector, and encapsulates the mesa stack, wherein a via is defined in the dielectric polymer overlying the emitter, the via extending from an upper surface of the dielectric polymer to the emitter contact, such that a surface of the emitter contact is exposed through the via; and
a thermally conductive film in contact with the upper surface of the dielectric polymer, sidewalls of the via, and the surface of the emitter contact that is exposed through the via.